Занятость:
Полная

График работы:
Полный день

Требования:
Doctor of philosophy (phd) or master of science (ms) in optoelectronic device technologies (semiconductor laser science and technology)



at least 10 yrs of experience in iii-v compound semiconductor laser diodes‚ especially nitride laser diodes‚ industry‚ or related areas
outstanding problem-solving abilities‚ strong communication skills‚ and change orientation
ability to speak english

Должностные обязанности:
Development of optoelectronic device technologies and semiconductor laser science and technology
provide scientific leadership and technology solutions on the key issues in compound semiconductor laser diode technology (such as algaas‚ algainp and alingan):
- substrates
- hetero and homo-epitaxial growth of compound semiconductor
- p-type and n-type doping technology
- metal contact technology
- wet and dry etching technology
- optoelectronic device packaging
- device design and simulation
- device characterization
develop a short-wavelength nitride-based semiconductor laser for hd-dvd applications. Strong and outstanding knowledge of technologies is needed on the nitride-based laser diode such as:
- algainn-based laser structure design and band-gap engineering
- epitaxial growth technology of laser structures using mocvd
- defect engineering for high performance and long lifetime laser diodes (elo and pende epitaxy technologies)
- laser device design and fabrication such as p-activation‚ contacts‚ as well as wet and dry etching including icp-rie/caibe
- facet fabrication by dry etching/cleaving
- flip-chip bonding technologies
- laser diode characterization technologies
able to make significant individual contributions to the development of high power and long lifetime gan based laser diodes‚ to catch up strong competitors (such as sony and nichia)
work with researchers and engineers at sait and samsung electronics / samsung electro-mechanics‚ its industrial partners‚ to transfer the developed technology to successful commercial products